Method for Dry Develop of Trilayer Photoresist Patterns

摘要

A method of forming a feature on a multi-layer semiconductor is disclosed. A pattern feature is formed in an uppermost layer of the multi-layer semiconductor. The multilayer semiconductor is etched with a SO2 based chemistry to extend the pattern feature to a lower layer of the multi-layer semiconductor. Use of the SO2 based chemistry for etch eliminates features roughness associated with conventional CO, SiCL4 or CO2-based chemistries.