发明名称 Lithographic apparatus and device manufacturing method
摘要 A lithographic system includes a source configured to generate a radiation, the source including a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to control a volume defined by the plasma; a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation; a substrate support configured to support a substrate; and a projection system configured to project the patterned beam of radiation onto the substrate.
申请公布号 US2009040491(A1) 申请公布日期 2009.02.12
申请号 US20070882853 申请日期 2007.08.06
申请人 ASML NETHERLANDS B.V. 发明人 IVANOV VLADIMIR VITALEVICH;BANINE VADIM YEVGENYEVICH;KOSHELEV KONSTANTIN NIKOLAEVICH;KRIVTSUN VLADIMIR MIHAILOVITCH
分类号 G03B27/54;H05G2/00 主分类号 G03B27/54
代理机构 代理人
主权项
地址