| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses decline in a yield relevant to formation of a via hole, and to provide its manufacturing method. SOLUTION: A GaN layer 2 and an n-type AlGaN layer 3 are formed on an insulating substrate 1, and thereafter, a gate electrode 4g, a source electrode 4s and a drain electrode 4d are formed. Next, an opening 6 reaching at least a surface of the insulating substrate 1 is formed in the source electrode 4s, the GaN layer 2 and the n-type AlGaN layer 3. Then, a Ni layer 8 is formed in the opening 6. Thereafter, by conducting dry etching using the Ni layer 8 as an etching stopper, the via hole 1s reaching the Ni layer 8 from a back face side of the insulating substrate 1 is formed in the insulating substrate. Then, a via wiring 16 is formed extending from an inside of the via hole 1s to a back face of the insulating substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
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