发明名称 DIELECTRIC LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A method for fabricating a dielectric layer structure includes providing a substrate, forming at least a low-k dielectric layer on the substrate, forming a single tensile layer on the low-k dielectric layer, and performing a moisture preventing treatment on the single tensile film. The single tensile layer possesses a stress comparative to a stress of the low-k dielectric layer and a hydrophobic characteristic that prevents itself from absorbing moisture.
申请公布号 US2009042053(A1) 申请公布日期 2009.02.12
申请号 US20070834643 申请日期 2007.08.06
申请人 LIN CHIN-HSIANG 发明人 LIN CHIN-HSIANG
分类号 H01L21/31;B32B5/18 主分类号 H01L21/31
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