A buffer circuit of a semiconductor memory device is provided to avoid an increase of an area by adding an equalization function to a buffer without changing an existing buffer structure. A buffer circuit of a semiconductor memory device includes a buffer unit(100), a delay unit(200), and an equalizer unit(300). The buffer unit outputs an output signal by buffering a first input signal(OUT) and a second input(OUTB). The delay unit delays the output signal during a predetermined time and outputs the delayed signal as an equalization signal. The equalizer unit equalizes the output signal in response to the equalization signal.
申请公布号
KR20090015725(A)
申请公布日期
2009.02.12
申请号
KR20070080293
申请日期
2007.08.09
申请人
HYNIX SEMICONDUCTOR INC.
发明人
LEE, JI WANG;PARK, KUN WOO;KIM, YONG JU;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;HWANG, TAE JIN;CHOI, HAE RANG