| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device for making constant a difference between the breakdown voltages of an LDMOS transistor and a protection diode at all times, and to provide a manufacturing method thereof. SOLUTION: On a semiconductor substrate 1, an LDMOS is formed and a diode for protecting the LDMOS from electrostatic breakdown is formed. The drain region 5 of the LDMOS is used as the cathode region 11 of the diode, and the back gate region of the LDMOS is used as the anode region 14 of the diode. The cathode region 11 of the diode and the drain region 5 of the LDMOS are formed in the same process, and the anode 14 of the diode and the back gate region 4 of the LDMOS are formed in the same process. The difference between the breakdown voltages of the lateral MOS transistor in which the source region and the drain region are arranged in the lateral direction of the semiconductor substrate and the protection diode is made constant at all times. COPYRIGHT: (C)2009,JPO&INPIT
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