发明名称 Elektrisches Bauelement mit dicht nebeneinander liegenden Kontaktanschlüssen und Verfahren zu dessen Herstellung
摘要 874,713. Semi-conductor devices; couplings. SIEMENS & HALSKE A.G. Sept. 26, 1958 [Sept. 27, 1957], No. 30844/58. Classes 37 and 38 (1). Electrical connection is made to closely adjacent contact members of an electrical component by applying an insulating substance around the contact members leaving at least part of the contact member exposed (or subsequently exposing such a part) and making connection to the exposed part of each contact member by means of an electrically conductive material applied on the surface of the insulating substance. The Figure shows a piece of germanium 1 and closely adjacent contact members 2 of aluminium and gold 20 microns apart embedded in an insulating substance 3 such as a silicone resin. Electrical leads 4 extend through the insulating substance and connection is made to the contact members by conductive layers 5 which may be deposited by vacuum deposition, spraying, chemically or electro-chemically or by any combination of such method. The insulating layer 3 may initially cover the transistor entirely. In which case part of the surface of each electrode is exposed before the deposition of layer 5.
申请公布号 CH365452(A) 申请公布日期 1962.11.15
申请号 CH19580064290 申请日期 1958.08.24
申请人 SIEMENS & HALSKE AKTIENGESELLSCHAFT 发明人 DAHLBERG,REINHARD,DR.
分类号 H01L23/29;H01L23/31;H01L23/488;H01R12/00 主分类号 H01L23/29
代理机构 代理人
主权项
地址