| 摘要 |
A semiconductor device and manufacturing method thereof are provided to form the anti-punchthrough layer of which both ends extends to the edge of the active area and to relieve the HEIP phenomenon. The semiconductor device comprises the substrate(21) having the element isolation region(22) and active area(23). The anti-punchthrough layer(24) covers the element isolation region(22) on the substrate. The both ends of the anti-punchthrough layer are extended to the edge of the active area. The gate electrode is formed on the gate insulating layer. The gate electrode comprises the first gate conductive film(26), and the second gate conductive film(27). The second gate conductive film is connected to the first gate conductive film and is formed on the top of the anti-punchthrough layer.
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