发明名称 FLASH MEMORY AND METHOD OF PROGRAMMING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of reducing the number of program time of a flash memory to cell. <P>SOLUTION: The flash memory programming method includes: a step for determining a plurality of LSB patterns; a step for storing the respective numbers of the plurality of LSB patterns stored in a flash memory, and addresses corresponding to the respective numbers of the plurality of LSB patterns; a step for counting the respective numbers of the plurality of LSB patterns in data transmitted from a host; a step for comparing the respective numbers of the LSB patterns in data with the respective numbers of the stored LSB patterns; and a step for programming the data to MSB concerning the address having the respective numbers of the LSB patterns in the data and also the number that is the most similar among the respective numbers of the stored LSB patterns. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009032261(A) 申请公布日期 2009.02.12
申请号 JP20080191210 申请日期 2008.07.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SON CHANG-IL
分类号 G06F12/16;G11C16/02;G11C16/04 主分类号 G06F12/16
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