| 摘要 |
PROBLEM TO BE SOLVED: To effectively remove particles adhered to a substrate while avoiding damage to a structure formed on the substrate surface. SOLUTION: A substrate processing apparatus 1 is configured to remove particles adhered to a semiconductor wafer W with minute air bubbles by imparting ultrasonic oscillation to a cooled processing liquid with a dissolved inert gas while immersing the semiconductor wafer W into the processing liquid. In the substrate processing apparatus 1, an inert gas is dissolved into the processing liquid cooled by a chiller 126 in a dissolution part 128 and the processing liquid 104, into which an inert gas is dissolved by the dissolution part 128, is stored in a processing tank 102. An ultrasonic transducer 156 imparts ultrasonic oscillation to the processing liquid 104 via the bottom part of a propagation tank 152, propagation water 154, and the bottom part of the processing tank 102. COPYRIGHT: (C)2009,JPO&INPIT
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