| 摘要 |
The present invention provides a method for fabricating semiconductor device, which is capable of adjusting a gate oxide layer thickness, including: providing a semiconductor substrate; growing a first oxide layer on a surface of the semiconductor substrate; patterning the first oxide layer to expose the first oxide layer corresponding to a gate to be formed; removing the exposed first oxide layer; immersing the substrate into deionized water to grow a second oxide layer; forming a polysilicon layer on the surfaces of the first oxide layer and the second oxide layer; and etching the polysilicon layer to form a gate. The method for fabricating semiconductor device according to the present invention, which is capable of adjusting the thickness of gate oxide layer, can control the thickness of gate oxide layer precisely to satisfy the requirement for different threshold voltages.
|
