| 摘要 |
A semiconductor device (10) includes a die (12) including an active region (16, 32, 42, 50), a scribe region (24), and a perimeter, wherein the scribe region is closer to the perimeter than the active region. In one embodiment, the die further comprises a crack arrest structure (26) formed in the scribe region, and wherein the crack arrest structure includes one of curva-linear shapes and polygonal shapes concentrically oriented around a common center located at or near at least one corner of the die. |
