| 摘要 |
The present invention concerns a semiconductor photoelectrode (1) comprising an upper layer (2) made of a photoactive material, an interface layer (3), at least in part adjacent to the upper layer (2), a semiconductor layer (4), at least in part adjacent to the interface layer (3); wherein theinterface layer (3) is at least in part interposed between the upper layer (2) and the semiconductor layer (4), such that there is at least one path, for an electron created in the upper layer (2), for moving from the upper layer (2) to the semiconductor layer (4) passing through the interface layer (3), where the interface layer (3) has a thickness such that it can be crossed, due to tunnelling, by the electrons which move from the upper layer (2) to the semiconductor layer (4) passing through the interface layer (3). |
