发明名称 SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To downsize a semiconductor device by making effective use of spaces around semiconductor chips and chip components. <P>SOLUTION: A semiconductor device 100 comprises a substrate 20, semiconductor chips 10a, 10b, chip components 12a, 12b, an insulating substrate 30, a wiring pattern 34, a via plug 32, a lead out electrode 36, a recess 40, and a resin 50. The insulating substrate 30 has a multilayer structure and is formed by laminating a plurality of insulating layers. The semiconductor chip 10a and the chip component 12a are mounted on the substrate 20 and embedded into the insulating substrate 30. On the surface of the semiconductor device 100, the recess 40 of which depth reaches up to one of wiring conductor layers is formed and the semiconductor chip 10b and the chip component 12b are mounded in the recess 40. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009033185(A) 申请公布日期 2009.02.12
申请号 JP20080228563 申请日期 2008.09.05
申请人 SANYO ELECTRIC CO LTD 发明人 IMAOKA SHUNICHI;USUI RYOSUKE
分类号 H01L25/04;H01L23/12;H01L25/18;H05K3/46 主分类号 H01L25/04
代理机构 代理人
主权项
地址