SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a sufficient stress is applied to a MOS transistor, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a semiconductor substrate 100; a gate structure 110 which includes a gate electrode 114 formed on the semiconductor substrate 100 and spacers 116, formed on the sidewalls of the gate electrode 114; source/drain regions 102 formed in the semiconductor substrate 100 on both the sides of the gate structure 110; and an etch stop film 130 formed on the gate structure 110 and includes a first region 130_1 formed on the spacers 116; and a second region 130_2, formed on the upper surface of the gate electrode, wherein the thickness of the first region 130_1 is 85% of the thickness of the second region 130_2 or smaller. COPYRIGHT: (C)2009,JPO&INPIT