发明名称 |
Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masks |
摘要 |
A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide growth. Since the method uses bulk silicon, it is cheaper than silicon-on-insulator (SOI) techniques. It also results in bulk-silicon that is latch-up immune.
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申请公布号 |
US2009042357(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070891170 |
申请日期 |
2007.08.09 |
申请人 |
O'CONNELL DENIS FINBARR;CONCANNON ANN MARGARET |
发明人 |
O'CONNELL DENIS FINBARR;CONCANNON ANN MARGARET |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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