发明名称 Method of increasing etchability of metals having chemical etching resistant microstructure
摘要 A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.
申请公布号 US2009039057(A1) 申请公布日期 2009.02.12
申请号 US20080287772 申请日期 2008.10.14
申请人 APPLIED MATERIALS, INC. 发明人 CROCKETT MARK;LANE JOHN W.;DECHELLIS MICAHEL J.;MELCER CHRIS;PORRAS ERICA R.;KHULLAR ANEESH;MOHAMMED BALARABE N.
分类号 C23F1/00;F16K27/00;F16K99/00 主分类号 C23F1/00
代理机构 代理人
主权项
地址