| 摘要 |
<p>The present invention provides a photovoltaic device 1 having excellent environmental durability and good adhesion with a collector electrode made of metal paste. The photovoltaic device 1 comprises an ITO film 5 on a p-type amorphous silicon hydride film 4 on a light incident side of the photovoltaic device 1 and a collector electrode 6 made of silver paste on the ITO film 5. A silicon oxide insulation film 10 made of SiOx is provided on at least regions on the ITO film 5 where the collector electrode 6 is not formed. The thickness of the silicon oxide insulation film 10 is about 1 to 10 times thicker than an arithmetic mean deviation (Ra) of the underlying ITO film 5. The silicon oxide insulation film 10 is a film having a Si-2p peak with a full width at half maximum of 2.45 or less, which is evaluated by an X-ray photoelectron spectroscopy.</p> |
