| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a memory of sufficient capacity and with an easily producible structure of high density. <P>SOLUTION: The semiconductor device is equipped with a transistor having a source diffusion layer, a drain diffusion layer, a gate insulating film, and a gate electrode; a first and a second plugs formed on a first interlayer insulating film, and respectively connected to one and the other sides of the source and drain diffusion layers; a third plug penetrating a second interlayer insulating film and connected to the first plug; a first wiring on the second interlayer insulating film which is connected to the third plug; a second wiring on a third interlayer insulating film which crosses the first wiring; a fourth interlayer insulating film; a hole penetrating the fourth, the third, and the second interlayer insulating films with the exposed side of the second wiring; and a fourth plug inserted into the hole through a dielectric film, and connected to the second plug. A capacitor is formed with the fourth plug, the second wiring, and the dielectric film sandwiched therebetween. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
