发明名称 PHASE CHANGE MATERIAL STRUCTURES
摘要 Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
申请公布号 US2009039331(A1) 申请公布日期 2009.02.12
申请号 US20070834851 申请日期 2007.08.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CLEVENGER LAWRENCE A.;ELMEGREEN BRUCE G.;KIM DEOK-KEE;KOTHANDARAMAN CHANDRASEKHARAN;KRUSIN-ELBAUM LIA;LAM CHUNG H.;NEWNS DENNIS M.
分类号 H01L47/00;G11C11/00 主分类号 H01L47/00
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