发明名称 |
PHASE CHANGE MATERIAL STRUCTURES |
摘要 |
Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
|
申请公布号 |
US2009039331(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070834851 |
申请日期 |
2007.08.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;ELMEGREEN BRUCE G.;KIM DEOK-KEE;KOTHANDARAMAN CHANDRASEKHARAN;KRUSIN-ELBAUM LIA;LAM CHUNG H.;NEWNS DENNIS M. |
分类号 |
H01L47/00;G11C11/00 |
主分类号 |
H01L47/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|