发明名称 |
STRUCTURE OF MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE |
摘要 |
A structure of magnetic memory cell including a first anti-ferromagnetic layer is provided. A first pinned layer is formed over the first anti-ferromagnetic layer. A tunneling barrier layer is formed over the first pinned layer. A free layer is formed over the tunneling barrier layer. A metal layer is formed over the free layer. A second pinned layer is formed over the metal layer. A second anti-ferromagnetic layer is formed over the second pinned layer.
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申请公布号 |
US2009039450(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070964008 |
申请日期 |
2007.12.25 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE YUAN-JEN;WANG DING-YEONG;HUNG CHIEN-CHUNG |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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