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发明名称
INTEGRATED CIRCUIT FABRICATION PROCESS WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION
摘要
Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing.
申请公布号
WO2009020510(A1)
申请公布日期
2009.02.12
申请号
WO2008US08705
申请日期
2008.07.16
申请人
APPLIED MATERIALS, INC.
发明人
MA, YI;KRAUS, PHILIP, ALLAN;OLSEN, CHRISTOPHER, SEAN;AHMED, KHALED, Z.;MAYUR, ABHILASH, J.
分类号
B23K26/02;H01L21/02
主分类号
B23K26/02
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