CMOS image sensor with improved charge transference and dark current characteristics and the mehtod for fabricating thereof,申请号KR20020042651-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	CMOS image sensor with improved charge transference and dark current characteristics and the mehtod for fabricating thereof
摘要
申请公布号	KR100883758(B1)	申请公布日期	2009.02.12
申请号	KR20020042651	申请日期	2002.07.19
申请人		发明人
分类号	H01L27/146	主分类号	H01L27/146
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Process and system for strengthening password security

System for and method of generating visual passwords

Accelerating functional verification of an integrated circuit

Iterative refinement of cohorts using visual exploration and data analytics

Batching heterogeneous database commands

Method and system for allowing access to developed applications via a multi-tenant on-demand database service

Deleting records in a multi-level storage architecture

Pentose fermentation by a recombinant microorganism

Flooding dish and method for changing media in the dish in the preparation of mammalian specimen culture and for cryo-preservation, freezing, vitrification and the thawing and warming of such specimens

Liquid fuel composition

Method and apparatus for testing coal coking properties

Chemical treatment method and additive used to treat fines migration and flow through porous media

Liquid developer and method for manufacturing the same

Ink for inkjet recording, inkjet recording method using the ink, and ink cartridge that accommodates the ink

Highly scratch-resistant coatings having good weathering and crack resistance

Polycarbonate composition and articles formed therefrom

Polycarbonate-siloxane copolymer compositions with improved appearance properties

Carboxyl group containing acrylic RDP and dry mix cement formulations containing them

Polymer composition for blow moulding

Functionalized silicones with polyalkylene oxide side chains