| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To avoid occurrence of fault by a GIDL current in a NAND flash memory in which a plurality of cell word lines are arranged in an extremely narrow pitch. <P>SOLUTION: The cell word lines WL0 to WL31 are fine-processed up to the limit of the exposure processes of an exposing apparatus, denoting distance between lines as "A" and width of line as "B", for example, in the NAND memory unit MU. A selection gate line SGS in the source side is arranged, against the cell word line WL0 neighboring thereto, keeping at least the distance of "C=n*A+(n-1)B, an integer of n≥2". <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
