| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the performance of a transistor is enhanced and the reliability of a product is improved. <P>SOLUTION: The semiconductor device is provided with a semiconductor element 32, a frame material 36 provided at the upper part of the semiconductor element 32, with a hollow part 38 formed inside, and a mold resin layer 42 which covers the periphery of the frame material 36. The frame material 36 is made from resin films (first resin film 57a and second resin film 58a) containing the same resin. An active region 34 of the semiconductor element 32 is exposed in the hollow part 38. <P>COPYRIGHT: (C)2009,JPO&INPIT |
