| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a high withstanding voltage by reducing an electric field in a junction terminal region. <P>SOLUTION: The semiconductor device comprises an element region 51 and the junction terminal region 52 surrounding the element region. The element region includes a first semiconductor region 2 of a first conductivity type, a second semiconductor region 4 of a second conductivity type, a third semiconductor region 10 of the first conductivity type, trenches 35 which penetrate the second semiconductor region and the third semiconductor region and have their bottom faces reaching the first semiconductor region 2, a gate insulation film 12 formed on the side face and the bottom face of the trenches, and gate electrodes 8 embedded in the trenches. The junction terminal region includes terminal trenches 55 formed in the depth direction from the top face of the second semiconductor region 4 so as to surround the element region, the gate insulation film 12 formed on the side wall and the bottom face of the terminal trenches, and the gate electrodes 8 embedded in the terminal trenches 55. The depth from the top face of the second semiconductor region 4 to the bottom face of the terminal trenches 55 is 0.9 to 2.0 times as large as the thickness of the second semiconductor region 4. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
