| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is provided with photodetectors for detection in one or a plurality of narrow-band wavelength ranges with a simple structural form. SOLUTION: The semiconductor device 10 has an integrated circuit including at least one photodetectors 14, 16, 18, which are respectively provided with silicon-containing layers 32, 34, 36, for example, silicon nitride layers or silicon dioxide layers, wherein the layer thicknesses of the silicon-containing layers 32, 34, 36 are chosen so that the wavelength-selective transmission for predetermined narrow band light waves, for example, light-wave transmission for wavelength ranges from 400 to 850 nm, can be achieved. COPYRIGHT: (C)2009,JPO&INPIT
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