| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress the reductions of its electric characteristics and the regularity and stability of its crystal structure by the diffusion of impurities. SOLUTION: In the semiconductor device, a buffer layer 11, a lower cladding layer 12, a lower guiding layer 13, an active layer 14, an upper guiding layer 15, an upper cladding layer 16, and a contact layer 17 are laminated on a substrate 10 in this order. Further, by using as a set a lamination structure constituted by laminating a diffusion suppressing layer 16A, a first upper cladding layer 16B, a diffusion suppressing layer 16C, and a second upper cladding layer 16D from the side of the substrate 10 in this order, the upper cladding layer 16 is so formed as to laminate a plural sets of lamination structures. Moreover, the diffusion suppressing layers 16A, 16C include as their main components compound semiconductors of groups II-VI wherefrom Mg, Te are excluded. COPYRIGHT: (C)2009,JPO&INPIT
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