GROUP III NITRIDE CRYSTAL AND METHOD FOR GROWING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal in which a large crystal can be grown by a liquid phase process.

SOLUTION: The method for growing the group III nitride crystal 10 by a liquid phase process comprises the steps of: preparing a substrate 1 having a flat principal plane 1m, wherein the substrate includes a group III nitride seed crystal 1a having the same chemical composition as the group III nitride crystal 10 at least at the side of the principal plane 1m and the average density of the threading dislocation in the principal plane 1m is 5×106cm-2or less; and bringing the principal plane 1m of the substrate 1 into contact with a solution obtained by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal to grow the group III nitride crystal 10 on the principal plane 1m.

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