| 摘要 |
A contact-making method for a semiconductor material contains the method steps of forming a diffusion barrier which promotes electrical contact and adhesion on at least one portion of a surface of a semiconductor and forming a metallization on the diffusion barrier. The diffusion barrier being formed by applying a metalliforous paste to at least one portion of the semiconductor surface or to at least one portion of a layer covering the semiconductor surface, and a semiconductor component with a diffusion barrier which is arranged in the surface of the semiconductor and which promotes electrical contact between the semiconductor material and a metallization. The metallization is applied to the diffusion barrier. The diffusion barrier is formed by a sintered metalliforous paste applied to at least one portion of the semiconductor surface.
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