发明名称 |
Photoresist Composition for Deep UV and Process Thereof |
摘要 |
The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
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申请公布号 |
US2009042148(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070834490 |
申请日期 |
2007.08.06 |
申请人 |
PADMANABAN MUNIRATHNA;CHAKRAPANI SRINIVASAN;LIN GUANYANG |
发明人 |
PADMANABAN MUNIRATHNA;CHAKRAPANI SRINIVASAN;LIN GUANYANG |
分类号 |
G03C1/04;G03C5/00 |
主分类号 |
G03C1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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