发明名称 Photoresist Composition for Deep UV and Process Thereof
摘要 The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
申请公布号 US2009042148(A1) 申请公布日期 2009.02.12
申请号 US20070834490 申请日期 2007.08.06
申请人 PADMANABAN MUNIRATHNA;CHAKRAPANI SRINIVASAN;LIN GUANYANG 发明人 PADMANABAN MUNIRATHNA;CHAKRAPANI SRINIVASAN;LIN GUANYANG
分类号 G03C1/04;G03C5/00 主分类号 G03C1/04
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