发明名称 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
摘要 |
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a second part. After a first metal layer with a first workfunction is formed on the first and second parts of the second dielectric layer, part of the first metal layer is converted into a second metal layer with a second workfunction.
|
申请公布号 |
US2009042405(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080157796 |
申请日期 |
2008.06.12 |
申请人 |
DOCZY MARK L;BRASK JUSTIN K;KAVALIEROS JACK;SHAH UDAY;METZ MATTHEW V;DATTA SUMAN;NAGISETTY RAMUNE;CHAU ROBERT S |
发明人 |
DOCZY MARK L.;BRASK JUSTIN K.;KAVALIEROS JACK;SHAH UDAY;METZ MATTHEW V.;DATTA SUMAN;NAGISETTY RAMUNE;CHAU ROBERT S. |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|