发明名称 |
RESISTIVE NON-VOLATILE MEMORY DEVICE |
摘要 |
The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the variable resistive material layer; and a second electrode coupled to the metal oxide layer. In an embodiment, the metal oxide layer provides a constant resistance.
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申请公布号 |
US2009039332(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070836593 |
申请日期 |
2007.08.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TZYH-CHEANG;YANG FU-LIANG;TSENG TSEUNG-YUEN;LIN CHIH-YANG |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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