| 摘要 |
The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (3, 4) formed on an InP semiconductor substrate (1) wherein a buffer layer (21) containing a quaternary compositional material is formed between the InP semiconductor substrate (1) and the light absorption layers (3, 4).
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