| 摘要 |
An apparatus, and method of manufacture thereof, comprising a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first gate electrode having a first metal layer forming a first trench and a second metal layer filling the first trench, wherein the first and second metal layers have substantially different metallic compositions. The second semiconductor device includes a second gate electrode having a third metal layer forming a second trench and a fourth metal layer filling the second trench, wherein the third and fourth metal layers have substantially different metallic compositions, and wherein the first and third metal layers have substantially different metallic compositions.
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