发明名称 PLANARIZING METHOD
摘要 Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.
申请公布号 US2009039056(A1) 申请公布日期 2009.02.12
申请号 US20070837189 申请日期 2007.08.10
申请人 TDK CORPORATION 发明人 KAMIJIMA AKIFUMI;YATSU HIDEYUKI;HATATE HITOSHI
分类号 B44C1/22 主分类号 B44C1/22
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