PN DIODE OF PRAM AND METHOD OF MANUFACTURING THE SAME

摘要

A PN diode of pram and method of manufacturing the same is provided to secure uniform junction and junction depth without the concentration grade by forming polysilicon layer in which a SEG layer and P-type impurity are doped. In a PN diode of pram and method of manufacturing the same, an N type impurity region(105) is formed in the fixed region of the semiconductor substrate(100). The interlayer insulating film(110) is formed on the semiconductor substrate having N type impurity region. The photoresist pattern for the contact hole forming is formed on the interlayer insulating film. The interlayer insulating film is etched by using the photoresist pattern as a mask. After the photoresist pattern is removed, the cleaning process is performed to the substrate to remove native oxide film which is generated on the surface of the exposed N type impurity region.