发明名称 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-FORMING SUBSTRATE AND PATTERNING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a heat-curable silicon-containing film-forming composition that forms an excellent pattern by using a formed silicon-containing intermediate film and ensures effective transfer of a photoresist pattern and accurate processing of a substrate. <P>SOLUTION: The heat-curable silicon-containing film-forming composition comprises (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a compound represented by the formula (1): L<SB>a</SB>H<SB>b</SB>X (wherein L is Li, Na, K, Rb or Ce; X is a hydroxy group or an organic acid group; a is &ge;1; and b is 0 or &ge;1) or (2) a compound represented by the formula (2): M<SB>a</SB>H<SB>b</SB>A (wherein M is sulfonium, iodonium or ammonium; and A is the X or a nonnucleophilic counter ion), (C) an organic acid, (D) an alcohol containing a cyclic ether as a substituent group and (E) an organic solvent. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009030006(A) 申请公布日期 2009.02.12
申请号 JP20070245832 申请日期 2007.09.21
申请人 SHIN ETSU CHEM CO LTD 发明人 OGIWARA TSUTOMU;YANO TOSHIHARU;HASEGAWA KOJI
分类号 C09D183/04;C08K3/12;C08K3/20;C08K5/09;C08K5/098;C08K5/15;C08K5/19;C08K5/42;C08L83/04;C09D7/12;G03F7/11;G03F7/26;G03F7/40;H01L21/027 主分类号 C09D183/04
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