| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can suppress an increase in resistance in a current passage as well as an intense peak emerging on the side of a substrate in a vertical lateral mode. SOLUTION: The semiconductor laser device 100 is provided with a substrate 10 made of nitride and a ridge 50 formed on the substrate 10. The substrate 10 includes a dislocation concentrated area 12 which is arranged extending in a direction oblique to the main surface 11 of the substrate 10, and the ridge 50 is formed to be positioned in an area which is located above the dislocation concentrated area 12 and in the area other than a part where the dislocation concentrated area 12 is exposed over in the main surface 11 of the substrate 10. COPYRIGHT: (C)2009,JPO&INPIT
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