GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

摘要

Disclosed is a group III nitride semiconductor epitaxial substrate, specifically an AlxGa1-xN epitaxial substrate (0 = x = 1), which is improved in crystal quality by suppressing generation of cracks and dislocations. More specifically disclosed is an AlxGa1-xN epitaxial substrate (0 < x = 1), which is useful for a light-emitting device of ultraviolet or deep ultraviolet region. The group III nitride semiconductor epitaxial substrate is composed of a base and an AlxGa1-xN (0 = x = 1) layer arranged on the base. This group III nitride semiconductor epitaxial substrate is characterized in that a layer, wherein crystals having -C polarity and crystals having +C polarity are mixed, is arranged on the base side of the AlxGa1-xN layer.