发明名称 TWO-PORT RESISTANCE SWITCH ELEMENT AND SEMICONDUCTOR DEVICE
摘要 <p>This invention provides a resistance switch element having a very small size of approximately 20 nm x 20 nm in terms of the whole element size and having higher electric conductivity by taking advantage of the smallness of the diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se in a simpler method which does not require a molecule inclusion step. Specifically, there is provided a two-port resistance switch element characterized by comprising multilayered carbon nanofibers or multilayered carbon nanotubes while providing nanoscale-width gaps therebetween.</p>
申请公布号 WO2009019980(A1) 申请公布日期 2009.02.12
申请号 WO2008JP63176 申请日期 2008.07.23
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;SUGA, HIROSHI;NAITOU, YASUHISA;HORIKAWA, MASAYO;SHIMIZU, TETSUO 发明人 SUGA, HIROSHI;NAITOU, YASUHISA;HORIKAWA, MASAYO;SHIMIZU, TETSUO
分类号 H01L29/06;B82B1/00;C01B31/02 主分类号 H01L29/06
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