TWO-PORT RESISTANCE SWITCH ELEMENT AND SEMICONDUCTOR DEVICE
摘要
<p>This invention provides a resistance switch element having a very small size of approximately 20 nm x 20 nm in terms of the whole element size and having higher electric conductivity by taking advantage of the smallness of the diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se in a simpler method which does not require a molecule inclusion step. Specifically, there is provided a two-port resistance switch element characterized by comprising multilayered carbon nanofibers or multilayered carbon nanotubes while providing nanoscale-width gaps therebetween.</p>
申请公布号
WO2009019980(A1)
申请公布日期
2009.02.12
申请号
WO2008JP63176
申请日期
2008.07.23
申请人
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;SUGA, HIROSHI;NAITOU, YASUHISA;HORIKAWA, MASAYO;SHIMIZU, TETSUO