METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF SI(GE) TO III-N MATERIALS

摘要

A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III -nitride semiconductor, at a temperature below 550 0C, to form a device quality heterojunction between the first semiconductor material and the Ill-nitride semiconductor, wherein the first semiconductor material is different from the Ill-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the Ill-nitride semiconductor.