| 摘要 |
<p>A method of manufacturing the phase shifting mask is provided to manufacture the mask with a superior uniformity of the pattern size even though the resist exposure, phenomenon, the light shield layer etching, etc are not accurately tuned. Provided is the substrate(100) having the phase shift layer(102), the light shield layer(104), and the hard mask layer(106) and the resist. The resist is developed and exposed and then the resist pattern is formed. The light shield layer is patterned by using the resist pattern. The pattern size(CD) of the patterned light shield layer is measured. The resist pattern is formed to expose the region in which correction is required. The light shield layer of the exposed region is etched and then the region is corrected to the desired size(CD). After the resist pattern is removed, the phase shift layer is patterned by using the corrected light shield layer as mask. The light shield region is defined by the light shield layer.</p> |
