| 摘要 |
A unit pixel suppressing dead zone and afterimage is provided to prevent generation of after image and dead area by preventing a potential barrier which is generated at the contact where two equipotential surfaces meet. In a unit pixel suppressing dead zone and afterimage, a unit pixel comprises a photo diode producing an image charge corresponding to the video signal received and comprised a transfer transistor(M1) switching the image charge with the floating diffusion area in response to the transmission control signal. The part near to the gate terminal of the transfer transistor has impurity concentration higher than that of the rest region. The equipotential surface having the highest or lowest voltage level low is near to the gate terminal of the transfer transistor of photodiode regions. The depth of the part near to the gate terminal of the transfer transistor is deeper than that of the rest photo diode region.
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