| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses characteristic failure, and to provide its manufacturing method by simplifying a process. <P>SOLUTION: A first conductive film and a second conductive film are formed on a substrate. A first insulating film is formed on the first conductive film and the second conductive film. A charge storage layer is selectively formed via the first insulating film on the first conductive film. A second insulating film is formed on the first insulating film and the charge storage layer. A first semiconductor film overlapping the first conductive film, a second semiconductor film overlapping the second conductive film, and a third semiconductor film which does not overlap the first conductive film, and the second conductive film are formed on the second insulating film. A third insulating film is formed on the first semiconductor film, the second semiconductor film, and the third semiconductor film. A third conductive film is formed above the third semiconductor film via the third insulating film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
