| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus wherein the density of memory cells is easily increased, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device includes a groove part 30 provided inside a semiconductor substrate 10, a charge storage layer 20 composed of an insulating film provided on both side faces of the groove part 30, a word line 22 embedded inside the groove part 30 through the charge storage layer, a source/drain region 12 provided inside the semiconductor substrate 10 on both sides of the groove part 30, a first wiring layer ML1 connected to one SD 13 of the source/drain region 12, and a second wiring layer ML2 connected to the other SD 12 of the source/drain region 12. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
