| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress fall of light emitting efficiency, variation of operating current, and deterioration of characteristics by aging, etc. <P>SOLUTION: The semiconductor light emitting element is characterized, in order to solve the problems, in that a type p active layer and a type p clad layer and a type n clad layer holding the type p active layer are included, the type p active layer, type p clad layer and type n clad layer are respectively formed of a AlGaInP system semiconductor, the type p active layer includes Zn as a dopant, and the type p clad layer includes both Mg and Zn as the dopant. <P>COPYRIGHT: (C)2009,JPO&INPIT |
