| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the thickness of a polishing film during an overpolish step following polishing of a barrier metal in Cu-CMP (Chemical Mechanical Polishing). SOLUTION: A table is previously created in which a relational expression between a circumferential length of a wire and a polishing rate during the overpolish step is entered. When deciding an overpolish time after the polishing of the barrier metal in the Cu-CMP, a polish time is calculated based on the circumferential length of the wire. Thus, the thickness of the overpolishing film is stabilized. COPYRIGHT: (C)2009,JPO&INPIT |
