发明名称 |
INTEGRATED CIRCUIT FABRICATION PROCESS FOR A HIGH MELTING TEMPERATURE SILICIDE WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION |
摘要 |
Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer of nickel is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying layer of a metal having a higher melting temperature than nickel. Thereafter, a rapid thermal process is performed to heat the substrate sufficiently to form metal silicide contacts at the top surfaces of the source-drain regions and of the gate electrode. The method further includes removing the remainder of the metal-containing layer and then depositing an optical absorber layer over the substrate prior to laser annealing.
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申请公布号 |
US2009042353(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070836299 |
申请日期 |
2007.08.09 |
申请人 |
MA YI;KRAUS PHILIP ALLAN;OLSEN CHRISTOPHER SEAN;AHMED KHALED Z;MAYUR ABHILASH J |
发明人 |
MA YI;KRAUS PHILIP ALLAN;OLSEN CHRISTOPHER SEAN;AHMED KHALED Z.;MAYUR ABHILASH J. |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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