发明名称 CHARGE PUMP CIRCUIT AND METHOD FOR CHARGE PUMPING
摘要 A charge pump circuit and a charge-pumping method are provided to increase an operating speed by generating previously a first boosting signal in response to a command signal before activating a sensing signal. A first boosting unit(120) outputs a first boosting signal of an intermediate voltage level by performing a pumping operation in response to a command signal. A sensing unit(112) outputs a sensing signal(det) when a voltage level of an output node is lower than a voltage level of a target voltage in response to the command signal. A final boosting unit(130) performs a charge-pumping operation for boosting the voltage level of the output node to a final boosting voltage level higher than the intermediate voltage level and the voltage level of the target voltage in response to the sensing signal and the first boosting signal.
申请公布号 KR20090014783(A) 申请公布日期 2009.02.11
申请号 KR20070078993 申请日期 2007.08.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JUNG HWAN;JEONG, IN CHUL
分类号 G11C5/14 主分类号 G11C5/14
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